Design of a 175 GHz SiGe-based voltage-controlled oscillator with greater than 7.6 dBm power

Oluseun Damilola Oyeleke, Aliyu Danjuma Usman, Kabir Ahmad Abubilal, Habeeb Bello, Olabode Idowu-Bismark


In this research, we present a low phase noise (PN) and wide tuning range 175 GHz inductors and capacitors (LC) voltage-controlled oscillator (VCO) based on a differential Colpitts oscillator that was designed using a 0.13 μm bipolar complementary metal oxide semiconductor (BiCMOS) and simulated. The square of the tank Q-factor and the square of the oscillation amplitude were both maximized to reduce PN. With an extensive examination of parasitic, mathematical analysis of load impedances, and implementation of differential design, the PN was reduced, and the output power was enhanced. Using a supply voltage of 1.6 V, the VCO consumes 41.9 mA, resulting in a total power usage of 67 mW to prevent undesirable PN deterioration, an inter-stage LC filter at the VCO-buffer interface increases the swing at the buffer input. To make a better output, a buffer is used to isolate the load from the VCO core. In addition, the VCO has a high linearity and the overall, the VCO presented in this study demonstrates excellent performance and has the potential to be used in a wide range of applications that require a high-performance, low-power VCO.


Colpitts oscillator; Microwave; SiGe 130 nm; Terahertz; Voltage controlled oscillator

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The International Journal of Informatics and Communication Technology (IJ-ICT)
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